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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 20V | |
| Transition Freq | 600MHz | |
| Noise Figure @ f | 3dB ~ 5dB @ 100MHz | |
| Amplification Factor | 18dB ~ 22dB | |
| Maximum Power Handling | 250mW | |
| DC Current Gain (hFE) @ Ic, Vce | 120 @ 1mA, 6V | |
| Maximum Collector Amps | 20mA | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-226-3, TO-92-3 Short Body Formed Leads |
Description
Assesses resistance at forward current 600MHz for LED or diode testing. Has a peak collector current (Ic) of 20mA. Features a DC current gain hFE at Ic assessed at 120 @ 1mA, 6V. Provides a 600MHz transition frequency for smooth signal modulation. Delivers 18dB ~ 22dB gain to enhance signal amplification effectiveness. Mounting configuration Through Hole for structural stability. Style of the enclosure/case TO-226-3, TO-92-3 Short Body Formed Leads that offers mechanical and thermal protection. Maximum power capability 250mW for safeguarding the device. Classification of transistor NPN for circuit design. Maximum Vce(on) at Vge 18dB ~ 22dB for transistor specifications. Maximum collector-emitter breakdown voltage 20V.
