Description

Assesses resistance at forward current 2.1GHz for LED or diode testing. Has a peak collector current (Ic) of 50mA. Features a DC current gain hFE at Ic assessed at 20 @ 8mA, 10V. Provides a 2.1GHz transition frequency for smooth signal modulation. Delivers 1.5dB gain to enhance signal amplification effectiveness. Mounting configuration Through Hole for structural stability. Style of the enclosure/case TO-226-3, TO-92-3 (TO-226AA) that offers mechanical and thermal protection. Maximum power capability 350mW for safeguarding the device. Classification of transistor NPN for circuit design. Maximum Vce(on) at Vge 1.5dB for transistor specifications. Maximum collector-emitter breakdown voltage 12V.