Attribute
Description
Manufacturer Part Number
UPA810T-A
Manufacturer
Description
TRANSISTOR NPN 4.5GHZ SOT363
Manufacturer Lead Time
1 week
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | 2 NPN (Dual) | |
| Max Collector-Emitter Breakdown | 12V | |
| Transition Freq | 4.5GHz | |
| Noise Figure @ f | 1.2dB ~ 2.5dB @ 1GHz | |
| Amplification Factor | 7dB ~ 9dB | |
| Maximum Power Handling | 200mW | |
| DC Current Gain (hFE) @ Ic, Vce | 70 @ 7mA, 3V | |
| Maximum Collector Amps | 100mA | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 6-TSSOP, SC-88, SOT-363 |
Description
Assesses resistance at forward current 4.5GHz for LED or diode testing. Has a peak collector current (Ic) of 100mA. Features a DC current gain hFE at Ic assessed at 70 @ 7mA, 3V. Provides a 4.5GHz transition frequency for smooth signal modulation. Delivers 7dB ~ 9dB gain to enhance signal amplification effectiveness. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case 6-TSSOP, SC-88, SOT-363 that offers mechanical and thermal protection. Maximum power capability 200mW for safeguarding the device. Classification of transistor 2 NPN (Dual) for circuit design. Maximum Vce(on) at Vge 7dB ~ 9dB for transistor specifications. Maximum collector-emitter breakdown voltage 12V.
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