Attribute
Description
Manufacturer Part Number
NE85630-T1-R24-A
Description
TRANSISTOR NPN 1GHZ SOT-323
Manufacturer Lead Time
1 week

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Product Attributes

Type Description
Category
Transistor Class NPN
Max Collector-Emitter Breakdown 12V
Transition Freq 4.5GHz
Noise Figure @ f 1.3dB ~ 2.2dB @ 1GHz ~ 2GHz
Amplification Factor 6dB ~ 12dB
Maximum Power Handling 150mW
DC Current Gain (hFE) @ Ic, Vce 40 @ 7mA, 3V
Maximum Collector Amps 100mA
Attachment Mounting Style Surface Mount
Component Housing Style SC-70, SOT-323

Description

Assesses resistance at forward current 4.5GHz for LED or diode testing. Has a peak collector current (Ic) of 100mA. Features a DC current gain hFE at Ic assessed at 40 @ 7mA, 3V. Provides a 4.5GHz transition frequency for smooth signal modulation. Delivers 6dB ~ 12dB gain to enhance signal amplification effectiveness. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case SC-70, SOT-323 that offers mechanical and thermal protection. Maximum power capability 150mW for safeguarding the device. Classification of transistor NPN for circuit design. Maximum Vce(on) at Vge 6dB ~ 12dB for transistor specifications. Maximum collector-emitter breakdown voltage 12V.