Description

Assesses resistance at forward current 10GHz for LED or diode testing. Has a peak collector current (Ic) of 35mA. Features a DC current gain hFE at Ic assessed at 50 @ 5mA, 3V. Provides a 10GHz transition frequency for smooth signal modulation. Delivers 5.3dB ~ 12.5dB gain to enhance signal amplification effectiveness. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case SC-70, SOT-323 that offers mechanical and thermal protection. Maximum power capability 150mW for safeguarding the device. Classification of transistor NPN for circuit design. Maximum Vce(on) at Vge 5.3dB ~ 12.5dB for transistor specifications. Maximum collector-emitter breakdown voltage 10V.