Attribute
Description
Manufacturer Part Number
START499ETR
Manufacturer
Description
TRANS RF SILICON NPN SOT-343
Manufacturer Lead Time
55 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 4.5V | |
| Transition Freq | 1.9GHz | |
| Noise Figure @ f | 3.3dB @ 1.8GHz | |
| Amplification Factor | 15dB | |
| Maximum Power Handling | 600mW | |
| DC Current Gain (hFE) @ Ic, Vce | 160 @ 160mA, 4V | |
| Maximum Collector Amps | 600mA | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SC-82A, SOT-343 |
Description
Assesses resistance at forward current 1.9GHz for LED or diode testing. Has a peak collector current (Ic) of 600mA. Features a DC current gain hFE at Ic assessed at 160 @ 160mA, 4V. Provides a 1.9GHz transition frequency for smooth signal modulation. Delivers 15dB gain to enhance signal amplification effectiveness. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case SC-82A, SOT-343 that offers mechanical and thermal protection. Maximum power capability 600mW for safeguarding the device. Classification of transistor NPN for circuit design. Maximum Vce(on) at Vge 15dB for transistor specifications. Maximum collector-emitter breakdown voltage 4.5V.
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