Attribute
Description
Manufacturer Part Number
SD1727
Manufacturer
Description
TRANSISTOR NPN RF HF SSB M164
Manufacturer Lead Time
55 weeks

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Product Attributes

Type Description
Category
Transistor Class NPN
Max Collector-Emitter Breakdown 55V
Transition Freq -
Noise Figure @ f -
Amplification Factor 14dB
Maximum Power Handling 233W
DC Current Gain (hFE) @ Ic, Vce 18 @ 1.4A, 6V
Maximum Collector Amps 10A
Attachment Mounting Style Chassis, Stud Mount
Component Housing Style M164

Description

Has a peak collector current (Ic) of 10A. Features a DC current gain hFE at Ic assessed at 18 @ 1.4A, 6V. Delivers 14dB gain to enhance signal amplification effectiveness. Mounting configuration Chassis, Stud Mount for structural stability. Style of the enclosure/case M164 that offers mechanical and thermal protection. Maximum power capability 233W for safeguarding the device. Classification of transistor NPN for circuit design. Maximum Vce(on) at Vge 14dB for transistor specifications. Maximum collector-emitter breakdown voltage 55V.