Attribute
Description
Manufacturer Part Number
SD1446
Manufacturer
Description
TRANSISTOR NPN RF BIPO UHF M113
Manufacturer Lead Time
55 weeks

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Product Attributes

Type Description
Category
Transistor Class NPN
Max Collector-Emitter Breakdown 18V
Transition Freq -
Noise Figure @ f -
Amplification Factor 10dB
Maximum Power Handling 183W
DC Current Gain (hFE) @ Ic, Vce 10 @ 5A, 5V
Maximum Collector Amps 12A
Attachment Mounting Style Surface Mount
Component Housing Style M113

Description

Has a peak collector current (Ic) of 12A. Features a DC current gain hFE at Ic assessed at 10 @ 5A, 5V. Delivers 10dB gain to enhance signal amplification effectiveness. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case M113 that offers mechanical and thermal protection. Maximum power capability 183W for safeguarding the device. Classification of transistor NPN for circuit design. Maximum Vce(on) at Vge 10dB for transistor specifications. Maximum collector-emitter breakdown voltage 18V.