Attribute
Description
Manufacturer Part Number
55GN01CA-TB-E
Manufacturer
Description
Transistor NPN 10V 70mA UHF LowNoise CP3
Manufacturer Lead Time
1 week

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Product Attributes

Type Description
Category
Transistor Class NPN
Max Collector-Emitter Breakdown 10V
Transition Freq 4.5GHz
Noise Figure @ f 1.9dB @ 1GHz
Amplification Factor 9.5dB
Maximum Power Handling 200mW
DC Current Gain (hFE) @ Ic, Vce 100 @ 10mA, 5V
Maximum Collector Amps 70mA
Attachment Mounting Style Surface Mount
Component Housing Style TO-236-3, SC-59, SOT-23-3

Description

Assesses resistance at forward current 4.5GHz for LED or diode testing. Has a peak collector current (Ic) of 70mA. Features a DC current gain hFE at Ic assessed at 100 @ 10mA, 5V. Provides a 4.5GHz transition frequency for smooth signal modulation. Delivers 9.5dB gain to enhance signal amplification effectiveness. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case TO-236-3, SC-59, SOT-23-3 that offers mechanical and thermal protection. Maximum power capability 200mW for safeguarding the device. Classification of transistor NPN for circuit design. Maximum Vce(on) at Vge 9.5dB for transistor specifications. Maximum collector-emitter breakdown voltage 10V.