Attribute
Description
Manufacturer Part Number
55GN01CA-TB-E
Manufacturer
Description
Transistor NPN 10V 70mA UHF LowNoise CP3
Manufacturer Lead Time
1 week
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 10V | |
| Transition Freq | 4.5GHz | |
| Noise Figure @ f | 1.9dB @ 1GHz | |
| Amplification Factor | 9.5dB | |
| Maximum Power Handling | 200mW | |
| DC Current Gain (hFE) @ Ic, Vce | 100 @ 10mA, 5V | |
| Maximum Collector Amps | 70mA | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-236-3, SC-59, SOT-23-3 |
Description
Assesses resistance at forward current 4.5GHz for LED or diode testing. Has a peak collector current (Ic) of 70mA. Features a DC current gain hFE at Ic assessed at 100 @ 10mA, 5V. Provides a 4.5GHz transition frequency for smooth signal modulation. Delivers 9.5dB gain to enhance signal amplification effectiveness. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case TO-236-3, SC-59, SOT-23-3 that offers mechanical and thermal protection. Maximum power capability 200mW for safeguarding the device. Classification of transistor NPN for circuit design. Maximum Vce(on) at Vge 9.5dB for transistor specifications. Maximum collector-emitter breakdown voltage 10V.
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