Attribute
Description
Manufacturer Part Number
BLT81,115
Manufacturer
Description
UHF POWER TRANSISTOR, NPN, 9.5V, 500MA,...
Manufacturer Lead Time
52 weeks

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Product Attributes

Type Description
Category
Transistor Class NPN
Max Collector-Emitter Breakdown 9.5V
Transition Freq 900MHz
Noise Figure @ f -
Amplification Factor 8dB
Maximum Power Handling 2W
DC Current Gain (hFE) @ Ic, Vce 25 @ 300mA, 5V
Maximum Collector Amps 500mA
Attachment Mounting Style Surface Mount
Component Housing Style TO-261-4, TO-261AA

Description

Assesses resistance at forward current 900MHz for LED or diode testing. Has a peak collector current (Ic) of 500mA. Features a DC current gain hFE at Ic assessed at 25 @ 300mA, 5V. Provides a 900MHz transition frequency for smooth signal modulation. Delivers 8dB gain to enhance signal amplification effectiveness. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case TO-261-4, TO-261AA that offers mechanical and thermal protection. Maximum power capability 2W for safeguarding the device. Classification of transistor NPN for circuit design. Maximum Vce(on) at Vge 8dB for transistor specifications. Maximum collector-emitter breakdown voltage 9.5V.