Attribute
Description
Manufacturer Part Number
BFG67,215
Manufacturer
Description
TRANS RF NPN 8GHZ 10V SOT143B
Manufacturer Lead Time
52 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 10V | |
| Transition Freq | 8GHz | |
| Noise Figure @ f | 1.3dB ~ 3dB @ 1GHz ~ 2GHz | |
| Amplification Factor | - | |
| Maximum Power Handling | 380mW | |
| DC Current Gain (hFE) @ Ic, Vce | 60 @ 15mA, 5V | |
| Maximum Collector Amps | 50mA | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-253-4, TO-253AA |
Description
Assesses resistance at forward current 8GHz for LED or diode testing. Has a peak collector current (Ic) of 50mA. Features a DC current gain hFE at Ic assessed at 60 @ 15mA, 5V. Provides a 8GHz transition frequency for smooth signal modulation. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case TO-253-4, TO-253AA that offers mechanical and thermal protection. Maximum power capability 380mW for safeguarding the device. Classification of transistor NPN for circuit design. Maximum collector-emitter breakdown voltage 10V.
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