Attribute
Description
Manufacturer Part Number
BFG25AW/X,115
Manufacturer
Description
TRANS RF NPN 5GHZ 5V SOT343
Manufacturer Lead Time
52 weeks

Our team will assist you shortly.

Product Attributes

Type Description
Category
Transistor Class NPN
Max Collector-Emitter Breakdown 5V
Transition Freq 5GHz
Noise Figure @ f 1.9dB ~ 2dB @1GHz
Amplification Factor -
Maximum Power Handling 500mW
DC Current Gain (hFE) @ Ic, Vce 50 @ 500µA, 1V
Maximum Collector Amps 6.5mA
Attachment Mounting Style Surface Mount
Component Housing Style SOT-343 Reverse Pinning

Description

Assesses resistance at forward current 5GHz for LED or diode testing. Has a peak collector current (Ic) of 6.5mA. Features a DC current gain hFE at Ic assessed at 50 @ 500µA, 1V. Provides a 5GHz transition frequency for smooth signal modulation. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case SOT-343 Reverse Pinning that offers mechanical and thermal protection. Maximum power capability 500mW for safeguarding the device. Classification of transistor NPN for circuit design. Maximum collector-emitter breakdown voltage 5V.