Attribute
Description
Manufacturer Part Number
BFG25AW/X,115
Manufacturer
Description
TRANS RF NPN 5GHZ 5V SOT343
Manufacturer Lead Time
52 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 5V | |
| Transition Freq | 5GHz | |
| Noise Figure @ f | 1.9dB ~ 2dB @1GHz | |
| Amplification Factor | - | |
| Maximum Power Handling | 500mW | |
| DC Current Gain (hFE) @ Ic, Vce | 50 @ 500µA, 1V | |
| Maximum Collector Amps | 6.5mA | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SOT-343 Reverse Pinning |
Description
Assesses resistance at forward current 5GHz for LED or diode testing. Has a peak collector current (Ic) of 6.5mA. Features a DC current gain hFE at Ic assessed at 50 @ 500µA, 1V. Provides a 5GHz transition frequency for smooth signal modulation. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case SOT-343 Reverse Pinning that offers mechanical and thermal protection. Maximum power capability 500mW for safeguarding the device. Classification of transistor NPN for circuit design. Maximum collector-emitter breakdown voltage 5V.
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