Attribute
Description
Manufacturer Part Number
BFG198,115
Manufacturer
Description
TRANS NPN 10V 8GHZ SOT223; Transistor Polarity:NPN; Collecto...
Manufacturer Lead Time
52 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 10V | |
| Transition Freq | 8GHz | |
| Noise Figure @ f | - | |
| Amplification Factor | - | |
| Maximum Power Handling | 1W | |
| DC Current Gain (hFE) @ Ic, Vce | 40 @ 50mA, 5V | |
| Maximum Collector Amps | 100mA | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-261-4, TO-261AA |
Description
Assesses resistance at forward current 8GHz for LED or diode testing. Has a peak collector current (Ic) of 100mA. Features a DC current gain hFE at Ic assessed at 40 @ 50mA, 5V. Provides a 8GHz transition frequency for smooth signal modulation. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case TO-261-4, TO-261AA that offers mechanical and thermal protection. Maximum power capability 1W for safeguarding the device. Classification of transistor NPN for circuit design. Maximum collector-emitter breakdown voltage 10V.
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