Attribute
Description
Manufacturer Part Number
SD1224-02
Description
TRANS RF BIPO 60W 5A M113
Manufacturer Lead Time
1 week

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Product Attributes

Type Description
Category
Transistor Class NPN
Max Collector-Emitter Breakdown 35V
Transition Freq 175MHz
Noise Figure @ f -
Amplification Factor 7.6dB
Maximum Power Handling 60W
DC Current Gain (hFE) @ Ic, Vce 20 @ 500mA, 5V
Maximum Collector Amps 5A
Attachment Mounting Style -
Component Housing Style -

Description

Assesses resistance at forward current 175MHz for LED or diode testing. Has a peak collector current (Ic) of 5A. Features a DC current gain hFE at Ic assessed at 20 @ 500mA, 5V. Provides a 175MHz transition frequency for smooth signal modulation. Delivers 7.6dB gain to enhance signal amplification effectiveness. Maximum power capability 60W for safeguarding the device. Classification of transistor NPN for circuit design. Maximum Vce(on) at Vge 7.6dB for transistor specifications. Maximum collector-emitter breakdown voltage 35V.