Attribute
Description
Manufacturer Part Number
SD1224-02
Manufacturer
Description
TRANS RF BIPO 60W 5A M113
Manufacturer Lead Time
1 week
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 35V | |
| Transition Freq | 175MHz | |
| Noise Figure @ f | - | |
| Amplification Factor | 7.6dB | |
| Maximum Power Handling | 60W | |
| DC Current Gain (hFE) @ Ic, Vce | 20 @ 500mA, 5V | |
| Maximum Collector Amps | 5A | |
| Attachment Mounting Style | - | |
| Component Housing Style | - |
Description
Assesses resistance at forward current 175MHz for LED or diode testing. Has a peak collector current (Ic) of 5A. Features a DC current gain hFE at Ic assessed at 20 @ 500mA, 5V. Provides a 175MHz transition frequency for smooth signal modulation. Delivers 7.6dB gain to enhance signal amplification effectiveness. Maximum power capability 60W for safeguarding the device. Classification of transistor NPN for circuit design. Maximum Vce(on) at Vge 7.6dB for transistor specifications. Maximum collector-emitter breakdown voltage 35V.
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