Attribute
Description
Manufacturer Part Number
MS1409
Description
TRANS RF BIPO 7W 1A TO39
Manufacturer Lead Time
1 week

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Product Attributes

Type Description
Category
Transistor Class NPN
Max Collector-Emitter Breakdown 40V
Transition Freq 175MHz
Noise Figure @ f -
Amplification Factor 10dB
Maximum Power Handling 7W
DC Current Gain (hFE) @ Ic, Vce 20 @ 100mA, 5V
Maximum Collector Amps 1A
Attachment Mounting Style -
Component Housing Style -

Description

Assesses resistance at forward current 175MHz for LED or diode testing. Has a peak collector current (Ic) of 1A. Features a DC current gain hFE at Ic assessed at 20 @ 100mA, 5V. Provides a 175MHz transition frequency for smooth signal modulation. Delivers 10dB gain to enhance signal amplification effectiveness. Maximum power capability 7W for safeguarding the device. Classification of transistor NPN for circuit design. Maximum Vce(on) at Vge 10dB for transistor specifications. Maximum collector-emitter breakdown voltage 40V.