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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 15V | |
| Transition Freq | 5GHz | |
| Noise Figure @ f | 2dB ~ 3dB @ 500MHz | |
| Amplification Factor | 13dB ~ 15.5dB | |
| Maximum Power Handling | 1.25W | |
| DC Current Gain (hFE) @ Ic, Vce | 50 @ 50mA, 5V | |
| Maximum Collector Amps | 200mA | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-SOIC (0.154", 3.90mm Width) |
Description
Assesses resistance at forward current 5GHz for LED or diode testing. Has a peak collector current (Ic) of 200mA. Features a DC current gain hFE at Ic assessed at 50 @ 50mA, 5V. Provides a 5GHz transition frequency for smooth signal modulation. Delivers 13dB ~ 15.5dB gain to enhance signal amplification effectiveness. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case 8-SOIC (0.154", 3.90mm Width) that offers mechanical and thermal protection. Maximum power capability 1.25W for safeguarding the device. Classification of transistor NPN for circuit design. Maximum Vce(on) at Vge 13dB ~ 15.5dB for transistor specifications. Maximum collector-emitter breakdown voltage 15V.
