Attribute
Description
Manufacturer Part Number
MRF517
Description
TRANS RF BIPO 2.5W 150MA TO39
Manufacturer Lead Time
1 week

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Product Attributes

Type Description
Category
Transistor Class NPN
Max Collector-Emitter Breakdown 20V
Transition Freq 4GHz
Noise Figure @ f -
Amplification Factor 9dB ~ 10dB
Maximum Power Handling 2.5W
DC Current Gain (hFE) @ Ic, Vce -
Maximum Collector Amps 150mA
Attachment Mounting Style -
Component Housing Style -

Description

Assesses resistance at forward current 4GHz for LED or diode testing. Has a peak collector current (Ic) of 150mA. Provides a 4GHz transition frequency for smooth signal modulation. Delivers 9dB ~ 10dB gain to enhance signal amplification effectiveness. Maximum power capability 2.5W for safeguarding the device. Classification of transistor NPN for circuit design. Maximum Vce(on) at Vge 9dB ~ 10dB for transistor specifications. Maximum collector-emitter breakdown voltage 20V.