Attribute
Description
Manufacturer Part Number
2A5
Manufacturer
Description
TRANS BIPO 55ET-2
Manufacturer Lead Time
1 week
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 22V | |
| Transition Freq | 3.4GHz ~ 3.7GHz | |
| Noise Figure @ f | - | |
| Amplification Factor | 7dB ~ 9dB | |
| Maximum Power Handling | 5.3W | |
| DC Current Gain (hFE) @ Ic, Vce | 20 @ 100mA, 5V | |
| Maximum Collector Amps | 3mA | |
| Attachment Mounting Style | - | |
| Component Housing Style | - |
Description
Assesses resistance at forward current 3.4GHz ~ 3.7GHz for LED or diode testing. Has a peak collector current (Ic) of 3mA. Features a DC current gain hFE at Ic assessed at 20 @ 100mA, 5V. Provides a 3.4GHz ~ 3.7GHz transition frequency for smooth signal modulation. Delivers 7dB ~ 9dB gain to enhance signal amplification effectiveness. Maximum power capability 5.3W for safeguarding the device. Classification of transistor NPN for circuit design. Maximum Vce(on) at Vge 7dB ~ 9dB for transistor specifications. Maximum collector-emitter breakdown voltage 22V.
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