Attribute
Description
Manufacturer Part Number
2A5
Description
TRANS BIPO 55ET-2
Manufacturer Lead Time
1 week

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Product Attributes

Type Description
Category
Transistor Class NPN
Max Collector-Emitter Breakdown 22V
Transition Freq 3.4GHz ~ 3.7GHz
Noise Figure @ f -
Amplification Factor 7dB ~ 9dB
Maximum Power Handling 5.3W
DC Current Gain (hFE) @ Ic, Vce 20 @ 100mA, 5V
Maximum Collector Amps 3mA
Attachment Mounting Style -
Component Housing Style -

Description

Assesses resistance at forward current 3.4GHz ~ 3.7GHz for LED or diode testing. Has a peak collector current (Ic) of 3mA. Features a DC current gain hFE at Ic assessed at 20 @ 100mA, 5V. Provides a 3.4GHz ~ 3.7GHz transition frequency for smooth signal modulation. Delivers 7dB ~ 9dB gain to enhance signal amplification effectiveness. Maximum power capability 5.3W for safeguarding the device. Classification of transistor NPN for circuit design. Maximum Vce(on) at Vge 7dB ~ 9dB for transistor specifications. Maximum collector-emitter breakdown voltage 22V.