Description

Assesses resistance at forward current 8GHz for LED or diode testing. Has a peak collector current (Ic) of 80mA. Features a DC current gain hFE at Ic assessed at 70 @ 30mA, 8V. Provides a 8GHz transition frequency for smooth signal modulation. Delivers 10.5dB ~ 16dB gain to enhance signal amplification effectiveness. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case SC-70, SOT-323 that offers mechanical and thermal protection. Maximum power capability 580mW for safeguarding the device. Classification of transistor NPN for circuit design. Maximum Vce(on) at Vge 10.5dB ~ 16dB for transistor specifications. Maximum collector-emitter breakdown voltage 12V.