Attribute
Description
Manufacturer Part Number
BFR 193L3 E6327
Description
TRANSISTOR RF NPN 12V TSLP-3
Manufacturer Lead Time
16 weeks
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Stock:

Distributor: 108

Quantity Unit Price Ext. Price
1 ₹ 27.59000 ₹ 27.59
10 ₹ 16.73000 ₹ 167.30
100 ₹ 13.26000 ₹ 1,326.00
500 ₹ 12.55000 ₹ 6,275.00
1000 ₹ 12.02000 ₹ 12,020.00
2500 ₹ 11.84000 ₹ 29,600.00
5000 ₹ 11.57000 ₹ 57,850.00
10000 ₹ 10.32000 ₹ 1,03,200.00
15000 ₹ 9.97000 ₹ 1,49,550.00

Product Attributes

Type Description
Category
Transistor Class NPN
Max Collector-Emitter Breakdown 12V
Transition Freq 8GHz
Noise Figure @ f 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Amplification Factor 12.5dB ~ 19dB
Maximum Power Handling 580mW
DC Current Gain (hFE) @ Ic, Vce 70 @ 30mA, 8V
Maximum Collector Amps 80mA
Attachment Mounting Style Surface Mount
Component Housing Style SC-101, SOT-883

Description

Assesses resistance at forward current 8GHz for LED or diode testing. Has a peak collector current (Ic) of 80mA. Features a DC current gain hFE at Ic assessed at 70 @ 30mA, 8V. Provides a 8GHz transition frequency for smooth signal modulation. Delivers 12.5dB ~ 19dB gain to enhance signal amplification effectiveness. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case SC-101, SOT-883 that offers mechanical and thermal protection. Maximum power capability 580mW for safeguarding the device. Classification of transistor NPN for circuit design. Maximum Vce(on) at Vge 12.5dB ~ 19dB for transistor specifications. Maximum collector-emitter breakdown voltage 12V.