Attribute
Description
Manufacturer Part Number
BFP 640 E6327
Description
TRANSISTOR NPN SIGE RF SOT-343
Manufacturer Lead Time
16 weeks

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Product Attributes

Type Description
Category
Transistor Class NPN
Max Collector-Emitter Breakdown 4.5V
Transition Freq 40GHz
Noise Figure @ f 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Amplification Factor 24dB
Maximum Power Handling 200mW
DC Current Gain (hFE) @ Ic, Vce 110 @ 30mA, 3V
Maximum Collector Amps 50mA
Attachment Mounting Style Surface Mount
Component Housing Style SC-82A, SOT-343

Description

Assesses resistance at forward current 40GHz for LED or diode testing. Has a peak collector current (Ic) of 50mA. Features a DC current gain hFE at Ic assessed at 110 @ 30mA, 3V. Provides a 40GHz transition frequency for smooth signal modulation. Delivers 24dB gain to enhance signal amplification effectiveness. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case SC-82A, SOT-343 that offers mechanical and thermal protection. Maximum power capability 200mW for safeguarding the device. Classification of transistor NPN for circuit design. Maximum Vce(on) at Vge 24dB for transistor specifications. Maximum collector-emitter breakdown voltage 4.5V.