Attribute
Description
Manufacturer Part Number
BFP 520 H6327
Manufacturer
Description
TRANS RF NPN 3.5V 40MA SOT343
Manufacturer Lead Time
16 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 3.5V | |
| Transition Freq | 45GHz | |
| Noise Figure @ f | 0.95dB @ 1.8GHz | |
| Amplification Factor | 22.5dB | |
| Maximum Power Handling | 100mW | |
| DC Current Gain (hFE) @ Ic, Vce | 70 @ 20mA, 2V | |
| Maximum Collector Amps | 40mA | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SC-82A, SOT-343 |
Description
Assesses resistance at forward current 45GHz for LED or diode testing. Has a peak collector current (Ic) of 40mA. Features a DC current gain hFE at Ic assessed at 70 @ 20mA, 2V. Provides a 45GHz transition frequency for smooth signal modulation. Delivers 22.5dB gain to enhance signal amplification effectiveness. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case SC-82A, SOT-343 that offers mechanical and thermal protection. Maximum power capability 100mW for safeguarding the device. Classification of transistor NPN for circuit design. Maximum Vce(on) at Vge 22.5dB for transistor specifications. Maximum collector-emitter breakdown voltage 3.5V.
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