Description

Assesses resistance at forward current 8GHz for LED or diode testing. Has a peak collector current (Ic) of 20mA. Features a DC current gain hFE at Ic assessed at 70 @ 70mA, 8V. Provides a 8GHz transition frequency for smooth signal modulation. Delivers 17.5dB ~ 21dB gain to enhance signal amplification effectiveness. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case TO-253-4, TO-253AA that offers mechanical and thermal protection. Maximum power capability 175mW for safeguarding the device. Classification of transistor NPN for circuit design. Maximum Vce(on) at Vge 17.5dB ~ 21dB for transistor specifications. Maximum collector-emitter breakdown voltage 12V.