Attribute
Description
Manufacturer Part Number
ZTX325STOB
Manufacturer
Description
TRANSISTOR RF NPN E-LINE
Manufacturer Lead Time
28 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 15V | |
| Transition Freq | 1.3GHz | |
| Noise Figure @ f | 5dB @ 500MHz | |
| Amplification Factor | 53dB | |
| Maximum Power Handling | 350mW | |
| DC Current Gain (hFE) @ Ic, Vce | 25 @ 2mA, 1V | |
| Maximum Collector Amps | 50mA | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | E-Line-3, Formed Leads |
Description
Assesses resistance at forward current 1.3GHz for LED or diode testing. Has a peak collector current (Ic) of 50mA. Features a DC current gain hFE at Ic assessed at 25 @ 2mA, 1V. Provides a 1.3GHz transition frequency for smooth signal modulation. Delivers 53dB gain to enhance signal amplification effectiveness. Mounting configuration Through Hole for structural stability. Style of the enclosure/case E-Line-3, Formed Leads that offers mechanical and thermal protection. Maximum power capability 350mW for safeguarding the device. Classification of transistor NPN for circuit design. Maximum Vce(on) at Vge 53dB for transistor specifications. Maximum collector-emitter breakdown voltage 15V.
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