Attribute
Description
Manufacturer Part Number
BFS17HTC
Manufacturer
Description
TRANSISTOR RF NPN SOT23-3
Manufacturer Lead Time
28 weeks

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Product Attributes

Type Description
Category
Transistor Class NPN
Max Collector-Emitter Breakdown 15V
Transition Freq 1.3GHz
Noise Figure @ f 4.5dB @ 500MHz
Amplification Factor -
Maximum Power Handling 330mW
DC Current Gain (hFE) @ Ic, Vce 70 @ 2mA, 1V
Maximum Collector Amps 25mA
Attachment Mounting Style Surface Mount
Component Housing Style TO-236-3, SC-59, SOT-23-3

Description

Assesses resistance at forward current 1.3GHz for LED or diode testing. Has a peak collector current (Ic) of 25mA. Features a DC current gain hFE at Ic assessed at 70 @ 2mA, 1V. Provides a 1.3GHz transition frequency for smooth signal modulation. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case TO-236-3, SC-59, SOT-23-3 that offers mechanical and thermal protection. Maximum power capability 330mW for safeguarding the device. Classification of transistor NPN for circuit design. Maximum collector-emitter breakdown voltage 15V.