Attribute
Description
Manufacturer Part Number
ULQ2004AN
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Manufacturer Lead Time
53 weeks

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Product Attributes

Type Description
Category
Transistor Class 7 NPN Darlington
Maximum Collector Amps 500mA
Max Collector-Emitter Breakdown 50V
Vce Saturation (Max) @ Ib, Ic 1.6V @ 500µA, 350mA
Collector Cutoff Max -
DC Current Gain (hFE) (Min) @ Ic, Vce -
Maximum Power Handling -
Transition Freq -
Attachment Mounting Style Through Hole
Component Housing Style 16-DIP (0.300", 7.62mm)

Description

Has a peak collector current (Ic) of 500mA. Features a DC current gain hFE at Ic assessed at 1.6V @ 500µA, 350mA. Mounting configuration Through Hole for structural stability. Style of the enclosure/case 16-DIP (0.300", 7.62mm) that offers mechanical and thermal protection. Classification of transistor 7 NPN Darlington for circuit design. Maximum Vce(on) at Vge 1.6V @ 500µA, 350mA for transistor specifications. Maximum collector-emitter breakdown voltage 50V.