Attribute
Description
Manufacturer Part Number
VEC2102-TL-E
Description
Transistors - Bipolar (BJT) -Single & Arrays, 2 PNP (Dual),...
Manufacturer Lead Time
1 week

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Product Attributes

Type Description
Category
Transistor Class 2 PNP (Dual)
Maximum Collector Amps 3A
Max Collector-Emitter Breakdown 30V
Vce Saturation (Max) @ Ib, Ic 235mV @ 30mA, 1.5A
Collector Cutoff Max -
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA, 2V
Maximum Power Handling 1.1W
Transition Freq 380MHz
Attachment Mounting Style Surface Mount
Component Housing Style 8-SMD, Flat Lead

Description

Has a peak collector current (Ic) of 3A. Features a DC current gain hFE at Ic assessed at 235mV @ 30mA, 1.5A. Provides a 380MHz transition frequency for smooth signal modulation. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case 8-SMD, Flat Lead that offers mechanical and thermal protection. Maximum power capability 1.1W for safeguarding the device. Classification of transistor 2 PNP (Dual) for circuit design. Maximum Vce(on) at Vge 235mV @ 30mA, 1.5A for transistor specifications. Maximum collector-emitter breakdown voltage 30V.