Attribute
Description
Manufacturer Part Number
SCH2201-TL-E
Description
Transistors - Bipolar (BJT) -Single & Arrays, 2 NPN (Dual),...
Manufacturer Lead Time
1 week

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Product Attributes

Type Description
Category
Transistor Class 2 NPN (Dual)
Maximum Collector Amps 800mA
Max Collector-Emitter Breakdown 15V
Vce Saturation (Max) @ Ib, Ic 280mV @ 20mA, 400mA
Collector Cutoff Max -
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 50mA, 2V
Maximum Power Handling 400mW
Transition Freq 440MHz
Attachment Mounting Style Surface Mount
Component Housing Style 6-SMD, Flat Leads

Description

Has a peak collector current (Ic) of 800mA. Features a DC current gain hFE at Ic assessed at 280mV @ 20mA, 400mA. Provides a 440MHz transition frequency for smooth signal modulation. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case 6-SMD, Flat Leads that offers mechanical and thermal protection. Maximum power capability 400mW for safeguarding the device. Classification of transistor 2 NPN (Dual) for circuit design. Maximum Vce(on) at Vge 280mV @ 20mA, 400mA for transistor specifications. Maximum collector-emitter breakdown voltage 15V.