Attribute
Description
Manufacturer Part Number
30C01SS-TL-E
Description
Transistors - Bipolar (BJT) -Single & Arrays, NPN, 400mA,...
Manufacturer Lead Time
1 week

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Product Attributes

Type Description
Category
Transistor Class NPN
Maximum Collector Amps 400mA
Max Collector-Emitter Breakdown 30V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 100mA
Collector Cutoff Max -
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 10mA, 2V
Maximum Power Handling 200mW
Transition Freq 380MHz
Attachment Mounting Style Surface Mount
Component Housing Style 3-SMD, Flat Leads

Description

Has a peak collector current (Ic) of 400mA. Features a DC current gain hFE at Ic assessed at 200mV @ 5mA, 100mA. Provides a 380MHz transition frequency for smooth signal modulation. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case 3-SMD, Flat Leads that offers mechanical and thermal protection. Maximum power capability 200mW for safeguarding the device. Classification of transistor NPN for circuit design. Maximum Vce(on) at Vge 200mV @ 5mA, 100mA for transistor specifications. Maximum collector-emitter breakdown voltage 30V.