Attribute
Description
Manufacturer Part Number
30A01SS-TL-E
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
PNP,
300mA,...
Manufacturer Lead Time
1 week
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | PNP | |
| Maximum Collector Amps | 300mA | |
| Max Collector-Emitter Breakdown | 30V | |
| Vce Saturation (Max) @ Ib, Ic | 220mV @ 5mA, 100mA | |
| Collector Cutoff Max | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 10mA, 2V | |
| Maximum Power Handling | 200mW | |
| Transition Freq | 520MHz | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 3-SMD, Flat Leads |
Description
Has a peak collector current (Ic) of 300mA. Features a DC current gain hFE at Ic assessed at 220mV @ 5mA, 100mA. Provides a 520MHz transition frequency for smooth signal modulation. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case 3-SMD, Flat Leads that offers mechanical and thermal protection. Maximum power capability 200mW for safeguarding the device. Classification of transistor PNP for circuit design. Maximum Vce(on) at Vge 220mV @ 5mA, 100mA for transistor specifications. Maximum collector-emitter breakdown voltage 30V.
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