Attribute
Description
Manufacturer Part Number
2SD1047P-E
Description
Transistors - Bipolar (BJT) -Single & Arrays, NPN, 12A, 140V
Manufacturer Lead Time
1 week

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Product Attributes

Type Description
Category
Transistor Class NPN
Maximum Collector Amps 12A
Max Collector-Emitter Breakdown 140V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 500mA, 5A
Collector Cutoff Max -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A, 5V
Maximum Power Handling 120W
Transition Freq 15MHz
Attachment Mounting Style Through Hole
Component Housing Style TO-3P-3, SC-65-3

Description

Has a peak collector current (Ic) of 12A. Features a DC current gain hFE at Ic assessed at 2.5V @ 500mA, 5A. Provides a 15MHz transition frequency for smooth signal modulation. Mounting configuration Through Hole for structural stability. Style of the enclosure/case TO-3P-3, SC-65-3 that offers mechanical and thermal protection. Maximum power capability 120W for safeguarding the device. Classification of transistor NPN for circuit design. Maximum Vce(on) at Vge 2.5V @ 500mA, 5A for transistor specifications. Maximum collector-emitter breakdown voltage 140V.