Attribute
Description
Manufacturer Part Number
2SC6081
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
5A,
50V
Manufacturer Lead Time
1 week
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Maximum Collector Amps | 5A | |
| Max Collector-Emitter Breakdown | 50V | |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 125mA, 2.5A | |
| Collector Cutoff Max | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 125mA, 2V | |
| Maximum Power Handling | 2W | |
| Transition Freq | 250MHz | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 Full Pack |
Description
Has a peak collector current (Ic) of 5A. Features a DC current gain hFE at Ic assessed at 400mV @ 125mA, 2.5A. Provides a 250MHz transition frequency for smooth signal modulation. Mounting configuration Through Hole for structural stability. Style of the enclosure/case TO-220-3 Full Pack that offers mechanical and thermal protection. Maximum power capability 2W for safeguarding the device. Classification of transistor NPN for circuit design. Maximum Vce(on) at Vge 400mV @ 125mA, 2.5A for transistor specifications. Maximum collector-emitter breakdown voltage 50V.
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