Attribute
Description
Manufacturer Part Number
2SB1274S
Description
Transistors - Bipolar (BJT) -Single & Arrays, PNP, 3A, 60V
Manufacturer Lead Time
1 week

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Product Attributes

Type Description
Category
Transistor Class PNP
Maximum Collector Amps 3A
Max Collector-Emitter Breakdown 60V
Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 2A
Collector Cutoff Max -
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 500mA, 5V
Maximum Power Handling 2W
Transition Freq 100MHz
Attachment Mounting Style Through Hole
Component Housing Style TO-220-3 Full Pack

Description

Has a peak collector current (Ic) of 3A. Features a DC current gain hFE at Ic assessed at 1V @ 200mA, 2A. Provides a 100MHz transition frequency for smooth signal modulation. Mounting configuration Through Hole for structural stability. Style of the enclosure/case TO-220-3 Full Pack that offers mechanical and thermal protection. Maximum power capability 2W for safeguarding the device. Classification of transistor PNP for circuit design. Maximum Vce(on) at Vge 1V @ 200mA, 2A for transistor specifications. Maximum collector-emitter breakdown voltage 60V.