Attribute
Description
Manufacturer Part Number
2SA2180
Description
Transistors - Bipolar (BJT) -Single & Arrays, PNP, 5A, 50V
Manufacturer Lead Time
1 week
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Stock:

Distributor: 135

Quantity Unit Price Ext. Price
100000 ₹ 16.04000 ₹ 16,04,000.00
10000 ₹ 19.13000 ₹ 1,91,300.00
1000 ₹ 21.47000 ₹ 21,470.00
500 ₹ 23.27000 ₹ 11,635.00
100 ₹ 25.86000 ₹ 2,586.00

Product Attributes

Type Description
Category
Transistor Class PNP
Maximum Collector Amps 5A
Max Collector-Emitter Breakdown 50V
Vce Saturation (Max) @ Ib, Ic 500mV @ 125mA, 2.5A
Collector Cutoff Max -
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 125mA, 2V
Maximum Power Handling 2W
Transition Freq 130MHz
Attachment Mounting Style Through Hole
Component Housing Style TO-220-3 Full Pack

Description

Has a peak collector current (Ic) of 5A. Features a DC current gain hFE at Ic assessed at 500mV @ 125mA, 2.5A. Provides a 130MHz transition frequency for smooth signal modulation. Mounting configuration Through Hole for structural stability. Style of the enclosure/case TO-220-3 Full Pack that offers mechanical and thermal protection. Maximum power capability 2W for safeguarding the device. Classification of transistor PNP for circuit design. Maximum Vce(on) at Vge 500mV @ 125mA, 2.5A for transistor specifications. Maximum collector-emitter breakdown voltage 50V.