Attribute
Description
Manufacturer Part Number
2SA1723
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
PNP,
300mA,...
Manufacturer Lead Time
1 week
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | PNP | |
| Maximum Collector Amps | 300mA | |
| Max Collector-Emitter Breakdown | 20V | |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 10mA, 100mA | |
| Collector Cutoff Max | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 50mA, 5V | |
| Maximum Power Handling | 1.2W | |
| Transition Freq | 1.5GHz | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-225AA, TO-126-3 |
Description
Has a peak collector current (Ic) of 300mA. Features a DC current gain hFE at Ic assessed at 1V @ 10mA, 100mA. Provides a 1.5GHz transition frequency for smooth signal modulation. Mounting configuration Through Hole for structural stability. Style of the enclosure/case TO-225AA, TO-126-3 that offers mechanical and thermal protection. Maximum power capability 1.2W for safeguarding the device. Classification of transistor PNP for circuit design. Maximum Vce(on) at Vge 1V @ 10mA, 100mA for transistor specifications. Maximum collector-emitter breakdown voltage 20V.
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