Description

Assesses resistance at forward current 10µA (ICBO) for LED or diode testing. Has a peak collector current (Ic) of 1A. Defines a collector cutoff current indicated at 10µA (ICBO). Features a DC current gain hFE at Ic assessed at 1.5V @ 1mA, 500mA. Provides a 50MHz transition frequency for smooth signal modulation. Mounting configuration Through Hole for structural stability. Style of the enclosure/case 10-SIP that offers mechanical and thermal protection. Maximum power capability 4W for safeguarding the device. Classification of transistor 4 NPN Darlington (Quad) for circuit design. Maximum Vce(on) at Vge 1.5V @ 1mA, 500mA for transistor specifications. Maximum collector-emitter breakdown voltage 60V.