Attribute
Description
Manufacturer Part Number
2SC4886
Description
Transistors - Bipolar (BJT) -Single & Arrays, NPN, 14A, 150V
Manufacturer Lead Time
1 week
Note : GST will not be applied to orders shipping outside of India

Stock:

Distributor: 128

Quantity Unit Price Ext. Price
8000 ₹ 159.31000 ₹ 12,74,480.00
4000 ₹ 166.43000 ₹ 6,65,720.00
2000 ₹ 168.21000 ₹ 3,36,420.00
1000 ₹ 169.99000 ₹ 1,69,990.00
500 ₹ 181.56000 ₹ 90,780.00
100 ₹ 233.18000 ₹ 23,318.00
50 ₹ 323.07000 ₹ 16,153.50
10 ₹ 330.19000 ₹ 3,301.90
1 ₹ 493.06000 ₹ 493.06

Product Attributes

Type Description
Category
Transistor Class NPN
Maximum Collector Amps 14A
Max Collector-Emitter Breakdown 150V
Vce Saturation (Max) @ Ib, Ic 2V @ 500mA, 5A
Collector Cutoff Max 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 5A, 4V
Maximum Power Handling 80W
Transition Freq 60MHz
Attachment Mounting Style Through Hole
Component Housing Style TO-3P-3, SC-65-3

Description

Assesses resistance at forward current 100µA (ICBO) for LED or diode testing. Has a peak collector current (Ic) of 14A. Defines a collector cutoff current indicated at 100µA (ICBO). Features a DC current gain hFE at Ic assessed at 2V @ 500mA, 5A. Provides a 60MHz transition frequency for smooth signal modulation. Mounting configuration Through Hole for structural stability. Style of the enclosure/case TO-3P-3, SC-65-3 that offers mechanical and thermal protection. Maximum power capability 80W for safeguarding the device. Classification of transistor NPN for circuit design. Maximum Vce(on) at Vge 2V @ 500mA, 5A for transistor specifications. Maximum collector-emitter breakdown voltage 150V.