Attribute
Description
Manufacturer Part Number
2SC2921
Description
Transistors - Bipolar (BJT) -Single & Arrays, NPN, 15A, 160V
Manufacturer Lead Time
1 week

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Product Attributes

Type Description
Category
Transistor Class NPN
Maximum Collector Amps 15A
Max Collector-Emitter Breakdown 160V
Vce Saturation (Max) @ Ib, Ic 2V @ 500mA, 5A
Collector Cutoff Max 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 5A, 4V
Maximum Power Handling 150W
Transition Freq 60MHz
Attachment Mounting Style Through Hole
Component Housing Style 3-ESIP

Description

Assesses resistance at forward current 100µA (ICBO) for LED or diode testing. Has a peak collector current (Ic) of 15A. Defines a collector cutoff current indicated at 100µA (ICBO). Features a DC current gain hFE at Ic assessed at 2V @ 500mA, 5A. Provides a 60MHz transition frequency for smooth signal modulation. Mounting configuration Through Hole for structural stability. Style of the enclosure/case 3-ESIP that offers mechanical and thermal protection. Maximum power capability 150W for safeguarding the device. Classification of transistor NPN for circuit design. Maximum Vce(on) at Vge 2V @ 500mA, 5A for transistor specifications. Maximum collector-emitter breakdown voltage 160V.