Attribute
Description
Manufacturer Part Number
2SB1570
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Manufacturer Lead Time
1 week
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | PNP - Darlington | |
| Maximum Collector Amps | 12A | |
| Max Collector-Emitter Breakdown | 150V | |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 7mA, 7A | |
| Collector Cutoff Max | 100µA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 5000 @ 7A, 4V | |
| Maximum Power Handling | 150W | |
| Transition Freq | 50MHz | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | 3-ESIP |
Description
Assesses resistance at forward current 100µA (ICBO) for LED or diode testing. Has a peak collector current (Ic) of 12A. Defines a collector cutoff current indicated at 100µA (ICBO). Features a DC current gain hFE at Ic assessed at 2.5V @ 7mA, 7A. Provides a 50MHz transition frequency for smooth signal modulation. Mounting configuration Through Hole for structural stability. Style of the enclosure/case 3-ESIP that offers mechanical and thermal protection. Maximum power capability 150W for safeguarding the device. Classification of transistor PNP - Darlington for circuit design. Maximum Vce(on) at Vge 2.5V @ 7mA, 7A for transistor specifications. Maximum collector-emitter breakdown voltage 150V.
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