Attribute
Description
Manufacturer Part Number
2SA1859A
Description
Transistors - Bipolar (BJT) -Single & Arrays, PNP, 2A, 180V
Manufacturer Lead Time
1 week
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Stock:

Distributor: 145

Quantity Unit Price Ext. Price
196 ₹ 157.76000 ₹ 30,920.96
147 ₹ 175.96000 ₹ 25,866.12
113 ₹ 182.03000 ₹ 20,569.39
82 ₹ 188.09000 ₹ 15,423.38
53 ₹ 194.17000 ₹ 10,291.01
22 ₹ 236.63000 ₹ 5,205.86

Product Attributes

Type Description
Category
Transistor Class PNP
Maximum Collector Amps 2A
Max Collector-Emitter Breakdown 180V
Vce Saturation (Max) @ Ib, Ic 1V @ 70mA, 700mA
Collector Cutoff Max 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 700mA, 10V
Maximum Power Handling 20W
Transition Freq 60MHz
Attachment Mounting Style Through Hole
Component Housing Style TO-220-3 Full Pack

Description

Assesses resistance at forward current 10µA (ICBO) for LED or diode testing. Has a peak collector current (Ic) of 2A. Defines a collector cutoff current indicated at 10µA (ICBO). Features a DC current gain hFE at Ic assessed at 1V @ 70mA, 700mA. Provides a 60MHz transition frequency for smooth signal modulation. Mounting configuration Through Hole for structural stability. Style of the enclosure/case TO-220-3 Full Pack that offers mechanical and thermal protection. Maximum power capability 20W for safeguarding the device. Classification of transistor PNP for circuit design. Maximum Vce(on) at Vge 1V @ 70mA, 700mA for transistor specifications. Maximum collector-emitter breakdown voltage 180V.