Attribute
Description
Manufacturer Part Number
2SA1294
Description
Transistors - Bipolar (BJT) -Single & Arrays, PNP, 15A, 230V
Manufacturer Lead Time
1 week
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Stock:

Distributor: 128

Quantity Unit Price Ext. Price
16000 ₹ 121.60000 ₹ 19,45,600.00
8000 ₹ 136.38000 ₹ 10,91,040.00
4000 ₹ 136.95000 ₹ 5,47,800.00
2000 ₹ 142.06000 ₹ 2,84,120.00
1000 ₹ 146.04000 ₹ 1,46,040.00
500 ₹ 156.27000 ₹ 78,135.00
100 ₹ 176.72000 ₹ 17,672.00
50 ₹ 188.65000 ₹ 9,432.50
10 ₹ 232.98000 ₹ 2,329.80
1 ₹ 365.38000 ₹ 365.38

Product Attributes

Type Description
Category
Transistor Class PNP
Maximum Collector Amps 15A
Max Collector-Emitter Breakdown 230V
Vce Saturation (Max) @ Ib, Ic 2V @ 500mA, 5A
Collector Cutoff Max 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 5A, 4V
Maximum Power Handling 130W
Transition Freq 35MHz
Attachment Mounting Style Through Hole
Component Housing Style TO-3P-3, SC-65-3

Description

Assesses resistance at forward current 100µA (ICBO) for LED or diode testing. Has a peak collector current (Ic) of 15A. Defines a collector cutoff current indicated at 100µA (ICBO). Features a DC current gain hFE at Ic assessed at 2V @ 500mA, 5A. Provides a 35MHz transition frequency for smooth signal modulation. Mounting configuration Through Hole for structural stability. Style of the enclosure/case TO-3P-3, SC-65-3 that offers mechanical and thermal protection. Maximum power capability 130W for safeguarding the device. Classification of transistor PNP for circuit design. Maximum Vce(on) at Vge 2V @ 500mA, 5A for transistor specifications. Maximum collector-emitter breakdown voltage 230V.