Description

Assesses resistance at forward current 500nA for LED or diode testing. Has a peak collector current (Ic) of 100mA. Defines a collector cutoff current indicated at 500nA. Features a DC current gain hFE at Ic assessed at 300mV @ 500µA, 10mA. Provides a 250MHz transition frequency for smooth signal modulation. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case SC-75, SOT-416 that offers mechanical and thermal protection. Maximum power capability 150mW for safeguarding the device. Classification of transistor PNP - Pre-Biased for circuit design. Maximum Vce(on) at Vge 300mV @ 500µA, 10mA for transistor specifications. Maximum collector-emitter breakdown voltage 50V.