Attribute
Description
Manufacturer Part Number
MUN2211T1G
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Manufacturer Lead Time
1 week
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN - Pre-Biased | |
| Maximum Collector Amps | 100mA | |
| Max Collector-Emitter Breakdown | 50V | |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA | |
| Collector Cutoff Max | 500nA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V | |
| Maximum Power Handling | 338mW | |
| Transition Freq | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-236-3, SC-59, SOT-23-3 |
Description
Assesses resistance at forward current 500nA for LED or diode testing. Has a peak collector current (Ic) of 100mA. Defines a collector cutoff current indicated at 500nA. Features a DC current gain hFE at Ic assessed at 250mV @ 300µA, 10mA. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case TO-236-3, SC-59, SOT-23-3 that offers mechanical and thermal protection. Maximum power capability 338mW for safeguarding the device. Classification of transistor NPN - Pre-Biased for circuit design. Maximum Vce(on) at Vge 250mV @ 300µA, 10mA for transistor specifications. Maximum collector-emitter breakdown voltage 50V.
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