Attribute
Description
Manufacturer Part Number
2N6988
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
4 PNP (Quad),...
Manufacturer Lead Time
1 week
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | 4 PNP (Quad) | |
| Maximum Collector Amps | 600mA | |
| Max Collector-Emitter Breakdown | 60V | |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA | |
| Collector Cutoff Max | 10µA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V | |
| Maximum Power Handling | 400mW | |
| Transition Freq | - | |
| Attachment Mounting Style | - | |
| Component Housing Style | - |
Description
Assesses resistance at forward current 10µA (ICBO) for LED or diode testing. Has a peak collector current (Ic) of 600mA. Defines a collector cutoff current indicated at 10µA (ICBO). Features a DC current gain hFE at Ic assessed at 1.6V @ 50mA, 500mA. Maximum power capability 400mW for safeguarding the device. Classification of transistor 4 PNP (Quad) for circuit design. Maximum Vce(on) at Vge 1.6V @ 50mA, 500mA for transistor specifications. Maximum collector-emitter breakdown voltage 60V.
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