Attribute
Description
Manufacturer Part Number
2N3838
Description
Transistors - Bipolar (BJT) -Single & Arrays, NPN, PNP,...
Manufacturer Lead Time
1 week

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Product Attributes

Type Description
Category
Transistor Class NPN, PNP
Maximum Collector Amps 600mA
Max Collector-Emitter Breakdown 40V
Vce Saturation (Max) @ Ib, Ic 400mV @ 15mA, 150mA
Collector Cutoff Max 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V
Maximum Power Handling 350mW
Transition Freq -
Attachment Mounting Style -
Component Housing Style -

Description

Assesses resistance at forward current 10µA (ICBO) for LED or diode testing. Has a peak collector current (Ic) of 600mA. Defines a collector cutoff current indicated at 10µA (ICBO). Features a DC current gain hFE at Ic assessed at 400mV @ 15mA, 150mA. Maximum power capability 350mW for safeguarding the device. Classification of transistor NPN, PNP for circuit design. Maximum Vce(on) at Vge 400mV @ 15mA, 150mA for transistor specifications. Maximum collector-emitter breakdown voltage 40V.