Attribute
Description
Manufacturer Part Number
2N3810L
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
2 PNP (Dual),...
Manufacturer Lead Time
1 week
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | 2 PNP (Dual) | |
| Maximum Collector Amps | 50mA | |
| Max Collector-Emitter Breakdown | 60V | |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 100µA, 1mA | |
| Collector Cutoff Max | 10µA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 100µA, 5V | |
| Maximum Power Handling | 350mW | |
| Transition Freq | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-78-6 Metal Can |
Description
Assesses resistance at forward current 10µA (ICBO) for LED or diode testing. Has a peak collector current (Ic) of 50mA. Defines a collector cutoff current indicated at 10µA (ICBO). Features a DC current gain hFE at Ic assessed at 250mV @ 100µA, 1mA. Mounting configuration Through Hole for structural stability. Style of the enclosure/case TO-78-6 Metal Can that offers mechanical and thermal protection. Maximum power capability 350mW for safeguarding the device. Classification of transistor 2 PNP (Dual) for circuit design. Maximum Vce(on) at Vge 250mV @ 100µA, 1mA for transistor specifications. Maximum collector-emitter breakdown voltage 60V.
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