Attribute
Description
Manufacturer Part Number
2N2905A
Description
Transistors - Bipolar (BJT) -Single & Arrays, PNP, 600mA,...
Manufacturer Lead Time
1 week

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Product Attributes

Type Description
Category
Transistor Class PNP
Maximum Collector Amps 600mA
Max Collector-Emitter Breakdown 60V
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Collector Cutoff Max 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V
Maximum Power Handling 800mW
Transition Freq -
Attachment Mounting Style Through Hole
Component Housing Style TO-205AD, TO-39-3 Metal Can

Description

Assesses resistance at forward current 1µA for LED or diode testing. Has a peak collector current (Ic) of 600mA. Defines a collector cutoff current indicated at 1µA. Features a DC current gain hFE at Ic assessed at 1.6V @ 50mA, 500mA. Mounting configuration Through Hole for structural stability. Style of the enclosure/case TO-205AD, TO-39-3 Metal Can that offers mechanical and thermal protection. Maximum power capability 800mW for safeguarding the device. Classification of transistor PNP for circuit design. Maximum Vce(on) at Vge 1.6V @ 50mA, 500mA for transistor specifications. Maximum collector-emitter breakdown voltage 60V.