Attribute
Description
Manufacturer Part Number
2N2369A
Description
Transistors - Bipolar (BJT) -Single & Arrays, NPN, 15V
Manufacturer Lead Time
1 week

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Product Attributes

Type Description
Category
Transistor Class NPN
Maximum Collector Amps -
Max Collector-Emitter Breakdown 15V
Vce Saturation (Max) @ Ib, Ic 450mV @ 10mA, 100mA
Collector Cutoff Max 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 100mA, 1V
Maximum Power Handling 500mW
Transition Freq -
Attachment Mounting Style -
Component Housing Style -

Description

Assesses resistance at forward current 10µA (ICBO) for LED or diode testing. Defines a collector cutoff current indicated at 10µA (ICBO). Features a DC current gain hFE at Ic assessed at 450mV @ 10mA, 100mA. Maximum power capability 500mW for safeguarding the device. Classification of transistor NPN for circuit design. Maximum Vce(on) at Vge 450mV @ 10mA, 100mA for transistor specifications. Maximum collector-emitter breakdown voltage 15V.