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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Maximum Collector Amps | 800mA | |
| Max Collector-Emitter Breakdown | 50V | |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA | |
| Collector Cutoff Max | 10µA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10mV | |
| Maximum Power Handling | 800mW | |
| Transition Freq | 250MHz | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-205AD, TO-39-3 Metal Can |
Description
Assesses resistance at forward current 10µA (ICBO) for LED or diode testing. Has a peak collector current (Ic) of 800mA. Defines a collector cutoff current indicated at 10µA (ICBO). Features a DC current gain hFE at Ic assessed at 1V @ 50mA, 500mA. Provides a 250MHz transition frequency for smooth signal modulation. Mounting configuration Through Hole for structural stability. Style of the enclosure/case TO-205AD, TO-39-3 Metal Can that offers mechanical and thermal protection. Maximum power capability 800mW for safeguarding the device. Classification of transistor NPN for circuit design. Maximum Vce(on) at Vge 1V @ 50mA, 500mA for transistor specifications. Maximum collector-emitter breakdown voltage 50V.
