Description

Assesses resistance at forward current Tariff may apply if shipping to the United States for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 131A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 700 V. Supports the drive voltage noted at 20V for RdsOn control. Includes FET category defined as N-Channel. Ensures maximum 215 nC @ 20 V gate charge at Vgs for improved switching efficiency. Maintains 215 nC @ 20 V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 4500 pF @ 700 V at Vds to protect the device. The input capacitance is specified at 4500 pF @ 700 V at Vds for peak performance. Mounting configuration Through Hole for structural stability. Temperature range -55°C ~ 175°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tube for safeguarding or transporting components. Style of the enclosure/case TO-247-3 that offers mechanical and thermal protection. Type of package TO-247-3 that preserves the integrity of the device. The maximum power dissipation 400W (Tc) for efficient thermal management. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 215 nC @ 20 V for MOSFET performance. Maximum Rds(on) at Id and Vgs 19mOhm @ 40A, 20V for MOSFET specifications. Supplier package type TO-247-3 for component selection. The classification for import duties Tariff may apply if shipping to the United States related to import and export transactions. The primary technology platform SiCFET (Silicon Carbide) linked to the product category. Maximum Vce(on) at Vge Tariff may apply if shipping to the United States for transistor specifications. Maximum Vgs +25V, -10V for MOSFET specifications. Maximum Vgs(th) at Id 2.4V @ 1mA for MOSFET threshold specifications.